smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3430 features super low on-state resistance: r ds(on)1 =7.3m max. (v gs =10v,i d =40a) r ds(on)2 =15m max. (v gs =4v,i d =40a) low c iss :c iss = 2800 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v i d 80 a i dp * 200 a power dissipation t c =25 84 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =40v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.0 2.5 v forward transfer admittance y fs v ds =10v,i d =40a 20 40 s r ds(on)1 v gs =10v,i d =40a 5.9 7.3 m r ds(on)2 v gs =4v,i d =40a 10.5 15 m input capacitance c iss 2800 pf output capacitance c oss 730 pf reverse transfer capacitance c rss 320 pf turn-on delay time t on 110 ns rise time t r 1800 ns turn-off delay time t off 170 ns fall time tf 350 ns total gate charge q g 50 nc gate to source charge q gs 10 nc gate to drain charge q gd 14 nc v ds =10v,v gs =0,f=1mhz i d =40a,v gs(on) =10v,r g =10 ,v dd =20v draintosourceon-stateresistance i d =80a, v dd =32v, v gs =10v product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
|
